Code moved

2014-04-08 21:19:35 +02:00
parent 77477c1687
commit 896ff1e386
6 changed files with 217 additions and 220 deletions
@@ -0,0 +1,126 @@
+#include "../../opentx.h"
+#include "stm32f2xx_flash.h"
+
+//After reset, write is not allowed in the Flash control register (FLASH_CR) to protect the
+//Flash memory against possible unwanted operations due, for example, to electric
+//disturbances. The following sequence is used to unlock this register:
+//1. Write KEY1 = 0x45670123 in the Flash key register (FLASH_KEYR)
+//2. Write KEY2 = 0xCDEF89AB in the Flash key register (FLASH_KEYR)
+//Any wrong sequence will return a bus error and lock up the FLASH_CR register until the
+//next reset.
+//The FLASH_CR register can be locked again by software by setting the LOCK bit in the
+//FLASH_CR register.
+void unlockFlash()
+{
+  FLASH->KEYR = 0x45670123;
+  FLASH->KEYR = 0xCDEF89AB;
+}
+
+void waitFlashIdle()
+{
+  while (FLASH->SR & FLASH_FLAG_BSY) {
+    wdt_reset();
+  }
+}
+
+#define SECTOR_MASK               ((uint32_t)0xFFFFFF07)
+
+void eraseSector(uint32_t sector)
+{
+  waitFlashIdle();
+
+  FLASH->CR &= CR_PSIZE_MASK;
+  FLASH->CR |= FLASH_PSIZE_WORD;
+  FLASH->CR &= SECTOR_MASK;
+  FLASH->CR |= FLASH_CR_SER | (sector << 3);
+  FLASH->CR |= FLASH_CR_STRT;
+
+  /* Wait for operation to be completed */
+  waitFlashIdle();
+
+  /* if the erase operation is completed, disable the SER Bit */
+  FLASH->CR &= (~FLASH_CR_SER);
+  FLASH->CR &= SECTOR_MASK;
+}
+
+void writeFlash(uint32_t *address, uint32_t *buffer)    // size is 256 bytes
+{
+  static uint8_t FlashBlocked = 1;
+
+  uint32_t i;
+
+  if ((uint32_t) address == 0x08008000) {
+    if (isFirmwareStart(buffer)) {
+      FlashBlocked = 0;
+    }
+    else {
+      FlashBlocked = 1;
+    }
+  }
+
+  if (FlashBlocked) {
+    return;
+  }
+
+  if ((uint32_t) address == 0x08008000) {
+    eraseSector(2);
+  }
+  if ((uint32_t) address == 0x0800C000) {
+    eraseSector(3);
+  }
+  if ((uint32_t) address == 0x08010000) {
+    eraseSector(4);
+  }
+  if ((uint32_t) address == 0x08020000) {
+    eraseSector(5);
+  }
+  if ((uint32_t) address == 0x08040000) {
+    eraseSector(6);
+  }
+  if ((uint32_t) address == 0x08060000) {
+    eraseSector(7);
+  }
+
+  // Now program the 256 bytes
+
+  for (i = 0; i < 64; i += 1) {
+    /* Device voltage range supposed to be [2.7V to 3.6V], the operation will
+     be done by word */
+
+    // Wait for last operation to be completed
+    waitFlashIdle();
+
+    FLASH->CR &= CR_PSIZE_MASK;
+    FLASH->CR |= FLASH_PSIZE_WORD;
+    FLASH->CR |= FLASH_CR_PG;
+
+    *address = *buffer;
+
+    /* Wait for operation to be completed */
+    waitFlashIdle();
+    FLASH->CR &= (~FLASH_CR_PG);
+
+    /* Check the written value */
+    if (*address != *buffer) {
+      /* Flash content doesn't match SRAM content */
+      return;
+    }
+    /* Increment FLASH destination address */
+    address += 1;
+    buffer += 1;
+  }
+}
+
+uint32_t isFirmwareStart(uint32_t *block)
+{
+  if ((block[0] & 0xFFFC0000) != 0x20000000) {
+    return 0;
+  }
+  if ((block[1] & 0xFFF00000) != 0x08000000) {
+    return 0;
+  }
+  if ((block[2] & 0xFFF00000) != 0x08000000) {
+    return 0;
+  }
+  return 1;
+}